CECCHI STEFANO CARLO

Pianetti, A., Cecchi, S., Hanke, M., Finley, J., Arciprete, F., Calarco, R., et al. (2026). Epitaxy and Phase Stability of 2D Hexagonal Gallium Telluride on Silicon. PHYSICA STATUS SOLIDI. RAPID RESEARCH LETTERS, 20(2) [10.1002/pssr.202500432]. Detail

Righi Riva, F., Cecchi, S., Prili, S., Abou El Kheir, O., Placidi, E., Sbroscia, M., et al. (2025). Electronic Properties and Stacking Ordering in Layered GeTe-Rich (GeTe)m(Sb2Te3)n. ACS APPLIED ELECTRONIC MATERIALS, 7(20), 9320-9328 [10.1021/acsaelm.5c01185]. Detail

Cecchi, S., Momand, J., Dragoni, D., ABOU EL KHEIR, O., Fagiani, F., Kriegner, D., et al. (2024). Thick Does the Trick: Genesis of Ferroelectricity in 2D GeTe-Rich (GeTe)m(Sb2Te3)n Lamellae. ADVANCED SCIENCE, 11(1 (January 5, 2024)) [10.1002/advs.202304785]. Detail

Tuktamyshev, A., Lambardi, D., Vichi, S., Cesura, F., Cecchi, S., Fedorov, A., et al. (2024). Local droplet etching of a vicinal InGaAs(111)A metamorphic layer. APPLIED SURFACE SCIENCE, 669(1 October 2024) [10.1016/j.apsusc.2024.160450]. Detail

Zallo, E., Pianetti, A., Prikhodko, A., Cecchi, S., Zaytseva, Y., Giuliani, A., et al. (2023). Two-dimensional single crystal monoclinic gallium telluride on silicon substrate via transformation of epitaxial hexagonal phase. NPJ 2D MATERIALS AND APPLICATIONS, 7(1) [10.1038/s41699-023-00390-4]. Detail