MIGLIO LEONIDA

Role
Full Professor  
Academic disciplines
Fisica della materia (FIS/03)
Office phone
Room:
  • U05, Floor: 2, Room: 2063

Publications

  • Bertoni, I., Ugolotti, A., Scalise, E., Miglio, L. (2024). Surface and volume energies of α-, β-, and κ-Ga2O3 under epitaxial strain induced by a sapphire substrate. JOURNAL OF MATERIALS CHEMISTRY. C, 12(5), 1820-1832 [10.1039/D3TC04284G]. Detail

  • Ge, G., Rovaris, F., Lanzoni, D., Barbisan, L., Tang, X., Miglio, L., et al. (2024). Silicon phase transitions in nanoindentation: Advanced molecular dynamics simulations with machine learning phase recognition. ACTA MATERIALIA, 263(15 January 2024) [10.1016/j.actamat.2023.119465]. Detail

  • Miglio, L., Scalise, E., Marzegalli, A., Glas, F. (2023). Defects in hexagonal Si-Ge nanowires: the extended I3 vs a “virtual” point-like defect. Intervento presentato a: International workshop on 2H Hex-SiGe and related materials, Eindhoven, Netherlands. Detail

  • Pedrini, J., Colombo, I., Minazzi, P., Barzaghi, A., Miglio, L., Isella, G., et al. (2023). Photonic Properties of Self-Assembled Semiconductor Microstructures. Intervento presentato a: ICSi-ISTDM 2023, Como, Italia. Detail

  • Rovaris, F., Ge, G., Marzegalli, A., Miglio, L., Scalise, E. (2023). Hexagonal Diamond phase of Si and Ge by nanoindentation. Intervento presentato a: International workshop on hexagonal SiGe and related materials, Eindhoven. Detail

Research projects

FUTUREOXIDE
Year: 2023
Call: FAQC 2023 - prima finestra
Grantors: Università degli Studi di MILANO-BICOCCA
CHALLENGE- 3C-SiC Hetero-epitaxiALLy grown on silicon compliancE substrates for sustaiNable wide-band-Gap powEr devices
Year: 2016
Call: 2015-085 - H2020-FETOPEN-2014-2015-RIA, H2020-NMBP-2016-2017 topic NMBP-09-2016, H2020-NMBP-2016-2017 - TOPIC :NMBP-02-2016 Advanced Materials for Power Electronics based on wide bandgap semiconductor devices technology
Grantors: EUROPEAN COMMISSION
Wilite
Year: 2011
Call: 2009-004 - Bando efficienza energetica
Disposable Dot Field Effect Transistor for High Speed Si integrated Circuits
Year: 2005
Call: 6th Framework programme FET-Open
SImulazione, diagnostica e Modeling di un processo innovativo di crescita CVD attivata con palsma di Bassa energia ed Alta Densità
Year: 2005

Awards

Awards

  • Premio Sapio Industria, Sapio SpA, 2013