MIGLIO LEONIDA

Role
Full Professor  
Academic disciplines
Theoretical Physics of Matter, Models, Mathematical Methods and Applications (PHYS-04/A)
Scientific-Disciplinary Group:
THEORETICAL PHYSICS OF MATTER, MODELS, MATHEMATICAL METHODS AND APPLICATIONS (02/PHYS-04)
Office phone
Room:
  • U05, Floor: 2, Room: 2063

Publications

  • Bikerouin, M., Marzegalli, A., Spirito, D., Schaffar, G., Bongiorno, C., Rovaris, F., et al. (2025). Formation of Micrometer-Sized Textured Hexagonal Silicon Crystals via Nanoindentation. SMALL STRUCTURES, 6(6 (June 2025)) [10.1002/sstr.202400552]. Detail

  • Seravalli, L., Ugolotti, A., Bergamaschini, R., Bosi, M., Cora, I., Mezzadri, F., et al. (2025). Supersaturation-Dependent Competition between β and κ Phases in the MOVPE Growth of Ga2O3on Al2O3(0001) and GaN (0001) Substrates. ACS APPLIED MATERIALS & INTERFACES, 17(45), 62261-62276 [10.1021/acsami.5c13401]. Detail

  • Ugolotti, A., Bergamaschini, R., Bertoni, I., Bosi, M., Seravalli, L., Mezzadri, F., et al. (2025). Interpretation of the competition between beta and kappa phases with supersaturation in MOVPE growth of Ga2O3 on c-oriented sapphire. Intervento presentato a: Italian Crystal Growth Conference 2025, Lecce, Italia. Detail

  • Marzegalli, A., Scalise, E., Bikerouin, M., Rovaris, F., Fantasia, A., Montalenti, F., et al. (2025). Towards Hexagonal Germanium via Nanoindentation. In Abstract Book: Hexagonal SiGe and Related Materials 3rd International Workshop. Detail

  • Rovaris, F., Dellevoet, J., Marzegalli, A., Schouten, M., Fantasia, A., Tse, O., et al. (2025). Origin and Evolution of I3 defects in Hexagonal Silicon and Germanium. In Abstract Book. Detail

Research projects

FUTUREOXIDE
Year: 2023
Call: FAQC 2023 - prima finestra
Grantors: Università degli Studi di MILANO-BICOCCA
CHALLENGE- 3C-SiC Hetero-epitaxiALLy grown on silicon compliancE substrates for sustaiNable wide-band-Gap powEr devices
Year: 2016
Call: 2015-085 - H2020-FETOPEN-2014-2015-RIA, H2020-NMBP-2016-2017 topic NMBP-09-2016, H2020-NMBP-2016-2017 - TOPIC :NMBP-02-2016 Advanced Materials for Power Electronics based on wide bandgap semiconductor devices technology
Grantors: EUROPEAN COMMISSION
Wilite
Year: 2011
Call: 2009-004 - Bando efficienza energetica
Disposable Dot Field Effect Transistor for High Speed Si integrated Circuits
Year: 2005
Call: 6th Framework programme FET-Open
SImulazione, diagnostica e Modeling di un processo innovativo di crescita CVD attivata con palsma di Bassa energia ed Alta Densità
Year: 2005

Awards

Awards

  • Premio Sapio Industria, Sapio SpA, 2013