MIGLIO LEONIDA

Role
Full Professor  
Academic disciplines
Theoretical Physics of Matter, Models, Mathematical Methods and Applications (PHYS-04/A)
Scientific-Disciplinary Group:
THEORETICAL PHYSICS OF MATTER, MODELS, MATHEMATICAL METHODS AND APPLICATIONS (02/PHYS-04)
Office phone
Room:
  • U05, Floor: 2, Room: 2063

Publications

  • Cicconi, G., Bosi, M., Mezzadri, F., Ugolotti, A., Cora, I., Seravalli, L., et al. (2026). Nucleation and faceting in (001) r-GeO2 heteroepitaxy on r-TiO2 by metalorganic vapor phase epitaxy. APPLIED SURFACE SCIENCE, 725(15 April 2026) [10.1016/j.apsusc.2025.165788]. Detail

  • Seravalli, L., Ugolotti, A., Bergamaschini, R., Bosi, M., Cora, I., Mezzadri, F., et al. (2025). Supersaturation-Dependent Competition between β and κ Phases in the MOVPE Growth of Ga2O3on Al2O3(0001) and GaN (0001) Substrates. ACS APPLIED MATERIALS & INTERFACES, 17(45), 62261-62276 [10.1021/acsami.5c13401]. Detail

  • Bikerouin, M., Marzegalli, A., Rovaris, F., Bongiorno, C., Zaghloul, M., Schaffar, G., et al. (2025). Formation of Micrometer-Sized Textured Hexagonal Silicon Crystals via Nanoindentation. In abstract book. Detail

  • Ugolotti, A., Bergamaschini, R., Bertoni, I., Bosi, M., Seravalli, L., Mezzadri, F., et al. (2025). Interpretation of the competition between beta and kappa phases with supersaturation in MOVPE growth of Ga2O3 on c-oriented sapphire. Intervento presentato a: Italian Crystal Growth Conference 2025, Lecce, Italia. Detail

  • Bertoni, I., Ugolotti, A., Scalise, E., Bergamaschini, R., Miglio, L. (2025). Interface energies of Ga2O3 phases with the sapphire substrate and the phase-locked epitaxy of metastable structures explained. JOURNAL OF MATERIALS CHEMISTRY. C, 13(3), 1469-1476 [10.1039/d4tc04307c]. Detail

Research projects

FUTUREOXIDE
Year: 2023
Call: FAQC 2023 - prima finestra
Grantors: Università degli Studi di MILANO-BICOCCA
CHALLENGE- 3C-SiC Hetero-epitaxiALLy grown on silicon compliancE substrates for sustaiNable wide-band-Gap powEr devices
Year: 2016
Call: 2015-085 - H2020-FETOPEN-2014-2015-RIA, H2020-NMBP-2016-2017 topic NMBP-09-2016, H2020-NMBP-2016-2017 - TOPIC :NMBP-02-2016 Advanced Materials for Power Electronics based on wide bandgap semiconductor devices technology
Grantors: EUROPEAN COMMISSION
Wilite
Year: 2011
Call: 2009-004 - Bando efficienza energetica
Disposable Dot Field Effect Transistor for High Speed Si integrated Circuits
Year: 2005
Call: 6th Framework programme FET-Open
SImulazione, diagnostica e Modeling di un processo innovativo di crescita CVD attivata con palsma di Bassa energia ed Alta Densità
Year: 2005

Awards

Awards

  • Premio Sapio Industria, Sapio SpA, 2013