BOSI GIANNI

Esposito, C., D'Aniello, F., Bosi, G., Stevenazzi, L., Baschirotto, A., Vadalà, V. (2026). EM-Assisted Open-Short De-Embedding Technique for 16-nm FinFET Technology. In 2026 107th ARFTG Microwave Measurement Conference (ARFTG) (pp.1-4) [10.1109/arftg68740.2026.11614607]. Detail

D'Aniello, F., Esposito, C., Bosi, G., Mordà, A., Stevenazzi, L., De Matteis, M., et al. (2026). Practical Considerations in 7 nm and 16 nm FinFET LNA Design: A Comparative Study. ELECTRONICS, 15(15) [10.3390/electronics15153396]. Detail

Carminati, L., Bosi, G., Esposito, C., D'Aniello, F., Gargiulo, A., Charbon, E., et al. (2026). ANN Based Cryogenic DC Modeling of a 16 nm nMOS FinFET. In 2026 IEEE MTT-S International Conference on Numerical Electromagnetic and Multiphysics Modeling and Optimization (NEMO) (pp.1-3) [10.1109/nemo66765.2026.11622274]. Detail

Bosi, G., Raffo, A., Giofre, R., Vadala, V., Manni, F., Marante, R., et al. (2025). Rethinking Microwave Power-Bar Characterization. In 2025 105th ARFTG Microwave Measurement Conference (ARFTG) (pp.1-4). Institute of Electrical and Electronics Engineers Inc. [10.1109/ARFTG65332.2025.11168147]. Detail

Choupan, N., Vadala, V., Bosi, G., Pirola, M., Ramella, C. (2025). Development of a GaAs Stacked Cells Based on Common-Gate Model Extraction Procedure. In 2025 20th European Microwave Integrated Circuits Conference (EuMIC) (pp.238-241). Institute of Electrical and Electronics Engineers Inc. [10.23919/EuMIC65284.2025.11234360]. Detail