BOSI GIANNI

Saeed, I., Bosi, G., Esposito, C., D'Aniello, F., Charbon, E., Baschirotto, A., et al. (2025). Empirical Finfet Cryo-Model Oriented to Integrated Circuits Design. In 2025 International Conference on IC Design and Technology (ICICDT) (pp.17-20). Institute of Electrical and Electronics Engineers Inc. [10.1109/ICICDT65192.2025.11078117]. Detail

D'Aniello, F., Esposito, C., Bosi, G., De Matteis, M., Baschirotto, A., Vadalà, V. (2025). A 4 GHz to 6 GHz LNA Design in 12-nm FinFET for Quantum Computing. In 2025 International Conference on IC Design and Technology (ICICDT) (pp.21-24). Institute of Electrical and Electronics Engineers Inc. [10.1109/ICICDT65192.2025.11077989]. Detail

Crupi, G., Vadala, V., Bosi, G., Gugliandolo, G., Bao, X., Giofre, R., et al. (2024). An Overview of the Impact of the Temperature on the Small- and Large-Signal Performance of 0.15-μm Microwave GaN HEMTs. In 2024 IEEE MTT-S International Wireless Symposium, IWS 2024 - Proceedings (pp.1-3). Institute of Electrical and Electronics Engineers Inc. [10.1109/IWS61525.2024.10713595]. Detail

Zhu, Z., Bosi, G., Raffo, A., Crupi, G., Cai, J. (2024). Accurate Modeling of GaN HEMTs Oriented to Analysis of Kink Effects in S22 and h21: An Effective Machine Learning Approach. IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY, 12, 201-210 [10.1109/JEDS.2024.3364809]. Detail

Kikuchi, K., Raffo, A., Vadalà, V., Bosi, G., Vannini, G., Yamamoto, H. (2024). A New Calibration Technique of Electromagnetic Simulators for Accurate Analyses of Microwave Components on Epitaxial Wafers. IEEE ACCESS, 12, 72721-72729 [10.1109/ACCESS.2024.3403037]. Detail