BOSI GIANNI

D'Aniello, F., Esposito, C., Bosi, G., De Matteis, M., Baschirotto, A., Vadalà, V. (2025). A 4 GHz to 6 GHz LNA Design in 12-nm FinFET for Quantum Computing. In 2025 International Conference on IC Design and Technology (ICICDT) (pp.21-24). Institute of Electrical and Electronics Engineers Inc. [10.1109/ICICDT65192.2025.11077989]. Detail

Saeed, I., Bosi, G., Esposito, C., D'Aniello, F., Charbon, E., Baschirotto, A., et al. (2025). Empirical Finfet Cryo-Model Oriented to Integrated Circuits Design. In 2025 International Conference on IC Design and Technology (ICICDT) (pp.17-20). Institute of Electrical and Electronics Engineers Inc. [10.1109/ICICDT65192.2025.11078117]. Detail

Nanni, J., Saderi, G., Bellanca, G., Bosi, G., Raffo, A., Vadalà, V., et al. (2024). Optimal Coupling for the Reduction of bimodality in 850nm-VCSEL-based Radio-over-G.652-Fiber. In 2023 International Topical Meeting on Microwave Photonics, MWP 2023 - Proceedings (pp.1-4). Institute of Electrical and Electronics Engineers Inc. [10.1109/MWP58203.2023.10416571]. Detail

Vadala, V., Raffo, A., Colzani, A., Fumagalli, M., Sivverini, G., Bosi, G., et al. (2024). On the Extraction of Accurate Non-Quasi-Static Transistor Models for E -Band Amplifier Design: Learning From the Past. IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 72(9), 5039-5050 [10.1109/TMTT.2024.3378597]. Detail

Zhu, Z., Bosi, G., Raffo, A., Crupi, G., Cai, J. (2024). Accurate Modeling of GaN HEMTs Oriented to Analysis of Kink Effects in S22 and h21: An Effective Machine Learning Approach. IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY, 12, 201-210 [10.1109/JEDS.2024.3364809]. Detail