D'ANIELLO FEDERICO

Esposito, C., D'Aniello, F., Bosi, G., Stevenazzi, L., Baschirotto, A., Vadalà, V. (2026). EM-Assisted Open-Short De-Embedding Technique for 16-nm FinFET Technology. In ARFTG Microwave Measurement Conference, ARFTG (pp.1-4) [10.1109/arftg68740.2026.11614607]. Detail

Mordà, A., Bosi, G., D'Aniello, F., Esposito, C., Crupi, G., Vadalà, V. (2026). Experimental Characterization up to 150 GHz and Scaling Effects of 0.1-μm GaAs Devices for W-Band Power Applications. In Proceedings of the 21st European Microwave Integrated Circuits Conference (pp.13-16) [10.23919/eumic69231.2026.11748376]. Detail

Carminati, L., Bosi, G., Esposito, C., D'Aniello, F., Gargiulo, A., Charbon, E., et al. (2026). ANN Based Cryogenic DC Modeling of a 16 nm nMOS FinFET. In 2026 IEEE MTT-S International Conference on Numerical Electromagnetic and Multiphysics Modeling and Optimization (NEMO) (pp.1-3) [10.1109/nemo66765.2026.11622274]. Detail

D'Aniello, F., Esposito, C., Bosi, G., Mordà, A., Stevenazzi, L., De Matteis, M., et al. (2026). Practical Considerations in 7 nm and 16 nm FinFET LNA Design: A Comparative Study. ELECTRONICS, 15(15) [10.3390/electronics15153396]. Detail

D'Aniello, F., Esposito, C., Bosi, G., De Matteis, M., Baschirotto, A., Vadalà, V. (2025). A 4 GHz to 6 GHz LNA Design in 12-nm FinFET for Quantum Computing. In 2025 International Conference on IC Design and Technology (ICICDT) (pp.21-24). Institute of Electrical and Electronics Engineers Inc. [10.1109/ICICDT65192.2025.11077989]. Detail