SCALISE EMILIO

Miglio, L., Scalise, E., Marzegalli, A., Glas, F. (2023). Defects in hexagonal Si-Ge nanowires: the extended I3 vs a “virtual” point-like defect. Intervento presentato a: International workshop on 2H Hex-SiGe and related materials, Eindhoven, Netherlands. Detail

Hu, J., Xiang, Y., Ferrari, B., Scalise, E., Vanacore, G. (2023). Indirect Exciton–Phonon Dynamics in MoS2 Revealed by Ultrafast Electron Diffraction. ADVANCED FUNCTIONAL MATERIALS, 33(19 (May 8, 2023)) [10.1002/adfm.202206395]. Detail

Miglio, L., Scalise, E., Marzegalli, A., Glas, F. (2022). Modelling the structural origin of defects in hexagonal Ge nanowires: the extended I3 vs a point-like defect. Intervento presentato a: GADEST-19. 19th Conference on Gettering and Defect Engineering in Semiconductor Technology, Mondsee, Austria. Detail

Barbisan, L., Scalise, E., Marzegalli, A. (2022). Evolution and Intersection of Extended Defects and Stacking Faults in 3C-SiC Layers on Si (001) Substrates by Molecular Dynamics Simulations: The Forest Dislocation Case. PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 259(9) [10.1002/pssb.202100584]. Detail

Scalise, E., Zimbone, M., Marzegalli, A. (2022). Impact of Inversion Domain Boundaries on the Electronic Properties of 3C-SiC. PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 259(9) [10.1002/pssb.202200093]. Detail