SCALISE EMILIO

Role
Associate professor  
Academic disciplines
Theoretical Physics of Matter, Models, Mathematical Methods and Applications (PHYS-04/A)
Scientific-Disciplinary Group:
THEORETICAL PHYSICS OF MATTER, MODELS, MATHEMATICAL METHODS AND APPLICATIONS (02/PHYS-04)
Email
[email protected]
Office phone
0264485233
Room:
  • U05, Floor: 2, Room: 2023

Research

My research interests lie primarily in the field of novel materials for nano-electronics, nano-photonics and energy-harvesting technologies.
My principal research activities are the modelling and simulation of semiconductor surfaces and interfaces, nanostructures and 2D materials. 
I have been focusing on the first-principles study of their structural, vibrational and electronic properties.

Publications

  • Bikerouin, M., Marzegalli, A., Spirito, D., Schaffar, G., Bongiorno, C., Rovaris, F., et al. (2025). Formation of Micrometer-Sized Textured Hexagonal Silicon Crystals via Nanoindentation. SMALL STRUCTURES, 6(6 (June 2025)) [10.1002/sstr.202400552]. Detail

  • Regazzoni, V., Rovaris, F., Marzegalli, A., Montalenti, F., Scalise, E. (2025). Electronic Properties of Perfect Dislocations in Germanium: A First-Principles Study. Intervento presentato a: 3rd International Workshop. Hexagonal SiGe and Related Materials, Parigi, Francia. Detail

  • Muchiri, P., Túnica, M., Zobelli, A., Marzegalli, A., Scalise, E., Amato, M. (2025). Dopant interactions with I3-basal stacking faults in hexagonal silicon: first-principles insights into fundamental mechanisms.. Intervento presentato a: Hexagonal SiGe and Related Materials, Parigi, Francia. Detail

  • Bertoni, I., Ugolotti, A., Scalise, E., Bergamaschini, R., Miglio, L. (2025). Interface energies of Ga2O3 phases with the sapphire substrate and the phase-locked epitaxy of metastable structures explained. JOURNAL OF MATERIALS CHEMISTRY. C, 13(3), 1469-1476 [10.1039/d4tc04307c]. Detail

  • Túnica, M., Muchiri, P., Zobelli, A., Marzegalli, A., Scalise, E., Amato, M. (2025). Interaction of Dopants with the I3-Type Basal Stacking Fault in Hexagonal-Diamond Si. JOURNAL OF PHYSICAL CHEMISTRY. C, 129(24), 11093-11102 [10.1021/acs.jpcc.5c01340]. Detail

Full list

Research projects

PNRR per la Missione 4, componente 2 Investimento 1.1- Avviso 104/2022 | SiGe Hexagonal Diamond Phase by nanoIndenTation (HD-PIT)
Year: 2022
Call: Bando PRIN 2022
Grantors: MINISTERO DELL'UNIVERSITA' E DELLA RICERCA (MUR)

Awards

Awards

  • Premio Giovani Talenti, Università degli Studi di Milano-Bicocca, Accademia dei Lincei, 2022
  • Premio Giovani Talenti dell'Università degli Studi di Milano-Bicocca, con il Patrocinio dell'Accademia Nazionale dei Lincei, Università degli Studi di Milano-Bicocca e Accademia Nazionale dei Lincei, 2020
  • Nanoresearch Top Papers Award, Nanoresearch Journal, 2015
  • Nanoresearch Top Papers Award, Nanoresearch Journal, 2015
  • EMRS Graduate Student Award, European Materials Research Society, 2013

Editorial boards

  • Membro del Comitato Scientifico - SEMICONDUCTOR PHYSICS, QUANTUM ELECTRONICS & OPTOELECTRONICS, 2021

Research and teaching assignments

  • Ricercatore universitario a t.d. - Università degli Studi di MILANO-BICOCCA, 2021 - 2024
  • Ricercatore universitario a t.d. - Università degli Studi di MILANO-BICOCCA, 2017 - 2021

Congresses/Conferences

  • Presidente/Chairman del comitato organizzativo - 2nd International Workshop on Hexagonal SiGe and related materials(Italia), 2024