TUKTAMYSHEV ARTUR

Tuktamyshev, A., Lambardi, D., Vichi, S., Cesura, F., Cecchi, S., Fedorov, A., et al. (2024). Local droplet etching of a vicinal InGaAs(111)A metamorphic layer. APPLIED SURFACE SCIENCE, 669(1 October 2024) [10.1016/j.apsusc.2024.160450]. Detail

Tuktamyshev, A., Vichi, S., Fedorov, A., Bietti, S., Sanguinetti, S. (2024). Highly symmetrical DE QDs on GaAs(111)A at 780 nm and 1.3 µm. Intervento presentato a: International workshop on telecom quantum dot non-classical light sources for quantum communication (QDCom 2024) - June 12 - 14, 2024, Breslavia, Polonia. Detail

Vichi, S., Bietti, S., Tuktamyshev, A., Fedorov, A., Sanguinetti, S. (2024). Quantum-confined modulated nanostructure for optoelectronic devices. Intervento presentato a: The 21st International Symposium on the Physics of Semiconductors and Applications (ISPSA 2024), Jeju, Corea del Sud. Detail

Cesura, F., Vichi, S., Tuktamyshev, A., Bietti, S., Fedorov, A., Sanguinetti, S., et al. (2024). Droplet free self-assembling of high density nanoholes on GaAs(100) via thermal drilling. JOURNAL OF CRYSTAL GROWTH, 630(15 March 2024) [10.1016/j.jcrysgro.2024.127588]. Detail

Tuktamyshev, A., Vichi, S., Cesura, F., Fedorov, A., Bietti, S., Sanguinetti, S. (2023). Droplet nucleation on a vicinal surface: temperature-activated transitions of a density dependence. Intervento presentato a: The International Conference on Crystal Growth and Epitaxy (ICCGE-20) - 30 July/4 August 2023, Naples, Italy. Detail